| PART |
Description |
Maker |
| STB3NC90Z-1 STP3NC90ZFP STP3NC90Z |
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP5NK60ZFP STD5NK60Z STD5NK60ZT4 STP5NK60Z |
N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESHPower MOSFET N沟道600V 1.2ohm - 5A条TO-220/TO-220FP/DPAK齐纳保护SuperMESH？功率MOSFET
N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI2N90 FQB2N90 FQB2N90TM FQI2N90TU |
900V N-Channel MOSFET
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STB6NC90Z STB6NC90Z-1 STP6NC90ZFP STP6NC90Z |
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道900V - 1.55ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 900V - 1.55 OHM - 5.4A TO-220/FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STW9NB90 6749 |
N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET N沟道900V - 0.85ohm - 9.7A -对MOSFET47 PowerMESH
N-CHANNEL 900V - 0.85 - 9.7A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF5801 |
Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）最大值\u003d 2.2ohm，身份证\u003d 0.6A的）
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFBF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
Power MOSFET(Vdss=900V/ Rds(on)=3.7ohm/ Id=3.6A)
|
International Rectifier
|
| STD4N20 |
N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAYMOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
| IRFY9140CM |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)
POWER MOSFET P-CHANNEL(BVdss=-100V Rds(on)=0.2ohm Id=-15.8A)
|
IRF[International Rectifier]
|
